FDD86250 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
* 100.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
* 100% UIL tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s .

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